128 SeriesBow and Global Film Stress Measurement. 
Non-contact full wafer stress mapping for semiconductor and flat panel application. 

Dual Laser Switching Technology.

3DIC TSV and BWS TTV
Film Stress
FEOL Electrical Characterization 
Thin wafer metrology 
Film AdhesionVersatility
The FSM 128 can accommodate 50mm to 200 mm wafers without the need to change sample holder. Versions are also available for specialized applications. (For example, the FSM 128L accommodates up to 300mm wafers, while the FSM 128G is designed for panels up to 650 x 550mm)
Simple Sample Placement + Retrieval
With a retractable stage door mechanism, the wafer stage is conveniently accessed for easy wafer placement and retrieval, making multiple wafer measurements a breeze.
Auto Switching Dual Laser
The FSM 128 series features a patented auto laser technology.When sample reflectivity is poor, the system will switch to an alternate laser with different wavelength.This enables the end user to measure almost any type of film including nitrides, polyimides, low k,high k, or metals, without problems.
2-D & 3-D Mapping
With a motorized rotation stage, the FSM 128 can very quickly generate a 3-D map to help the end user to visualize whole wafer curvature or stress changes to pinpoint localized regions where there are process and uniformity issues.
Film Thickness
Film thickness mapping for dielectric films can be integrated into the FSM 128, transforming the tool into a powerful and versatile desktop unit for R&D and production environments.
Operating temperature: Ambient
Measurement technique: Non-contact laser scanning
Wafer size: FSM 128NT: 50mm to 200mm (standard)
                     FSM 128L: 150mm, 200mm, and 300mm
                     FSM 128G: Panels up to 550 x 650mm
Scanning method: High precision single line scan and programmable multiple diametric scans for 2-D and 3-D map profiles with motorlzed rotational stage
Auto intensity:Automatically adjusts laser intensity according to reflectivity of samples
Auto switching dual lasers: 650nm and 780nm
Film stress measurement range: 1 MPA to 4 GPA for a typical Si wafer (provided curvature or bow1 height change is at least 1μm)
Bow height change measurement range: 1μm to 4mm
Repeatability: 1% (1 sigma) on a 20m curvature mirror standard2
Accuracy: Better than 2.5% based on a 20m radius curvature mirror2
Laser class: Class 1
Data compatibility: Measurement results or maps are exportable to spreadsheet programs like Excel? or to jpeg image files
Optional accessories:FSM Reflectometry for film thickness mapping for dielectric films and calibration standards
Computer:CPU: Intel core i5 or better, Ram: 2Gb min hard drive: 1Tb optical drive: DVD R/W, USB Port (Min) 4. Ethernet connections: 2 RJ-45
Dimensions & weight:
FSM 128NT: 14” (W) x 22”(L) x 15”(H); 50lbs
FSM 128L: 14”(W) x 26”(L) x 15”(H); 70lbs
FSM 128G: 37”(W) x 48”(D) x 19”(H); 200lbs

Power: 100v/220v; 20A 

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Contact our application team immediately: 021-37018108, info@boyuesh.com